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Silicon on insulator (SOI) technology refers to the use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance, thereby improving performance.[1] SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or sapphire (these types of devices are called silicon on sapphire, or SOS). The choice of insulator depends largely on intended application, with sapphire being used for high-performance radio frequency (RF) and radiation-sensitive applications, and silicon dioxide for diminished short channel effects in microelectronics devices.[2] The insulating layer and topmost silicon layer also vary widely with application.[3] The first industrial implementation of SOI was announced by IBM in August 1998.[4]
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The implementation of SOI technology is one of several manufacturing strategies employed to allow the continued miniaturization of microelectronic devices, colloquially referred to as extending Moore's Law. Reported benefits of SOI technology relative to conventional silicon (bulk CMOS) processing include[5]:
From a manufacturing perspective, SOI substrates are compatible with most conventional fabrication processes. In general, an SOI-based process may be implemented without special equipment or significant retooling of an existing factory. Among challenges unique to SOI are novel metrology requirements to account for the buried oxide layer and concerns about differential stress in the topmost silicon layer. The primary barrier to SOI implementation is the drastic increase in substrate cost, which contributes an estimated 10–15% increase to total manufacturing costs.[6]
SiO2-based SOI wafers can be produced by several methods:
An exhaustive review of these various manufacturing processes may be found in reference [1]
IBM began to use SOI in the high-end RS64-IV "Istar" PowerPC-AS microprocessor in 2000. Other examples of microprocessors built on SOI technology include AMD's 130 nm, 90 nm, 65 nm, 45 nm and 32 nm single, dual, quad, six and eight core processors since 2001.[15] Freescale adopted SOI in their PowerPC 7455 CPU in late 2001, currently Freescale is shipping SOI products in 180 nm, 130 nm, 90 nm and 45 nm lines.[16] The 90 nm Power Architecture based processors used in the Xbox 360, PlayStation 3 and Wii use SOI technology as well. Competitive offerings from Intel, however, such as the 65 nm Core 2 and Core 2 Duo microprocessors, are built using conventional bulk CMOS technology. Intel's new 45 nm process will continue to use conventional technology. In January, 2005 Intel researchers reported on an experimental single-chip silicon rib waveguide Raman laser built using SOI.[17]
In November 2010, several news sources indicated that Intel may switch to SOI for the 22 nm node.[18]. More recently, Intel announced it will not go to SOI at 22nm due to costs, and instead has used FinFET technology in Ivy Bridge.
On the foundry side, July 2006 TSMC claimed no customer wanted SOI,[19] but Chartered Semiconductor devoted a whole fab to SOI.[20]
In 1990, Peregrine Semiconductor began development of an SOI process technology utilizing a standard 0.5um CMOS node and an enhanced sapphire substrate. Its patented silicon on sapphire (SOS) process is widely used in high-performance RF applications. The intrinsic benefits of the insulating sapphire substrate allow for high isolation, high linearity and electro-static discharge (ESD) tolerance. Multiple other companies have also applied SOI technology to successful RF applications in smartphones and cellular radios.[21]
SOI wafers are widely used in silicon photonics.[22] The crystalline silicon layer on insulator can be used to fabricate optical waveguides and other passive optical devices for integrated optics. The crystalline silicon layer is sandwiched between the buried insulator (Silicon oxide, Sapphire etc.) and top cladding of air (or Silicon oxide or any other low refractive index material). This enables propagation of electromagnetic waves in the waveguides on the basis of total internal reflection.
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